Renesas Electronics Corporation 71V016SA20BFGI

Renesas 71V016SA20BFGI - High-Performance 1Mbit Asynchronous SRAM

The 71V016SA20BFGI from Renesas Electronics is a high-speed, low-power 1-megabit static random access memory (SRAM) designed for demanding embedded applications requiring fast, reliable volatile memory storage. With its 20-nanosecond access time and parallel interface, this SRAM delivers exceptional performance for industrial, automotive, telecommunications, and computing systems.

Key Features & Benefits

• Ultra-Fast Access: 20ns access time ensures rapid data retrieval for time-critical applications
• Flexible Organization: 64K x 16 memory architecture optimized for 16-bit data bus systems
• Wide Operating Range: -40°C to 85°C temperature range suitable for industrial and automotive environments
• Compact Footprint: 48-pin CABGA (7x7mm) surface mount package saves valuable board space
• Low Voltage Operation: 3V to 3.6V supply voltage for energy-efficient designs
• RoHS Compliant: Environmentally friendly, lead-free construction

Applications

Ideal for embedded systems, industrial controllers, networking equipment, automotive electronics, medical devices, and any application requiring high-speed, reliable temporary data storage with parallel bus architecture.

Quality & Reliability

Manufactured by Renesas Electronics Corporation, a global leader in semiconductor solutions, this SRAM component meets stringent quality standards and is backed by comprehensive technical documentation and long-term availability commitments for mission-critical designs.