Alliance Memory, Inc. AS6C2008-55BINTR
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 10.79 | Dhs. 10.79 |
| 15+ | Dhs. 10.44 | Dhs. 156.60 |
| 25+ | Dhs. 10.22 | Dhs. 255.50 |
| 50+ | Dhs. 9.65 | Dhs. 482.50 |
| 100+ | Dhs. 8.51 | Dhs. 851.00 |
| N+ | Dhs. 1.70 | Price Inquiry |
Request Quote / Inquiry
High-Performance 2Mbit Asynchronous SRAM for Mission-Critical Applications
The AS6C2008-55BINTR from Alliance Memory delivers exceptional reliability and performance for demanding aerospace, automotive, industrial, medical, and telecommunications applications. This 2Mbit asynchronous SRAM features a 256K x 8 memory organization with ultra-fast 55ns access time, ensuring rapid data retrieval in time-sensitive systems.
Key Features & Benefits:
- High-Speed Performance: 55ns access time and write cycle time for real-time processing
- Wide Operating Range: -40°C to 85°C temperature tolerance for harsh environments
- Low Power Operation: 2.7V to 3.6V supply voltage for energy-efficient designs
- Space-Saving Package: Compact 36-TFBGA (6x8) surface mount design
- Parallel Interface: Simple integration with existing system architectures
- RoHS Compliant: Environmentally friendly manufacturing
Engineered for applications requiring non-volatile memory alternatives with superior speed and endurance, the AS6C2008-55BINTR is the ideal choice for cache memory, buffer storage, and data logging in mission-critical systems.
Related Resources
Explore more high-reliability semiconductor solutions:
- Memory Collection - Browse our complete range of memory products for aerospace, automotive, and industrial applications
- HQICKEY Home - Discover premium semiconductors for mission-critical systems
- Industry News & Updates - Stay informed about the latest semiconductor technologies and trends
| Product attributes | Property Value |
| Manufacturer | Alliance Memory, Inc. |
| Product Series | |
| Packaging | Tape & Reel (TR) | |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 2Mbit |
| Memory Organization | 256K x 8 |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 55ns |
| Access Time | 55 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 36-TFBGA |
| Supplier Device Package | 36-TFBGA (6x8) |
| ROHS |

AS6C2008-55BINTR.pdf