BYTe Semiconductor BY25FQ256ELSIG(R)

BYTe BY25FQ256ELSIG(R) - High-Performance 256Mbit NOR Flash Memory

The BY25FQ256ELSIG(R) is a high-density, low-voltage NOR Flash memory solution from BYTe Semiconductor, engineered for demanding aerospace, automotive, industrial, and telecommunications applications. This 256Mbit device delivers exceptional performance with Quad I/O SPI interface and DTR support, making it ideal for code storage, data logging, and firmware applications requiring fast read access and reliable non-volatile storage.

Key Features & Benefits:

• High Density Storage: 256Mbit (32M x 8) memory organization provides ample space for complex firmware and data storage requirements
• Fast Performance: 166MHz clock frequency with 5ns access time ensures rapid data retrieval for time-critical applications
• Advanced Interface: SPI Quad I/O, QPI, and DTR support enables flexible integration and high-speed data transfer
• Low Voltage Operation: 1.65V to 1.95V supply voltage optimizes power efficiency in battery-operated and energy-conscious designs
• Industrial Temperature Range: -40°C to 85°C operating range ensures reliable performance in harsh environments
• Compact Surface Mount Package: 8-SOIC (5.30mm width) footprint saves valuable PCB space
• Production-Ready Packaging: Tape & Reel format streamlines automated assembly processes

Ideal Applications:

Perfect for embedded systems, IoT devices, automotive ECUs, industrial controllers, network equipment, and any application requiring reliable, high-speed non-volatile memory with long-term availability.

• BY25FQ256ELSIG(R).pdf