BYTe Semiconductor BY25FQM1GESEIG(R)
Normaler Preis
Dhs. 50.76
Normaler Preis
Dhs. 53.42
Verkaufspreis
Dhs. 50.76
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 50.76 | Dhs. 50.76 |
| 15+ | Dhs. 49.15 | Dhs. 737.25 |
| 25+ | Dhs. 48.08 | Dhs. 1,202.00 |
| 50+ | Dhs. 45.41 | Dhs. 2,270.50 |
| 100+ | Dhs. 40.07 | Dhs. 4,007.00 |
| N+ | Dhs. 8.01 | Price Inquiry |
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BY25FQM1GESEIG(R) - High-Performance 1Gbit NOR Flash Memory
Authentic BYTe Semiconductor flash memory solution engineered for demanding aerospace, automotive, industrial, and telecommunications applications. This 1Gbit NOR flash device delivers exceptional performance with SPI Quad I/O interface and DTR support, operating reliably across extended temperature ranges.
Key Features & Benefits
- High-Density Storage: 1Gbit (128M x 8) memory organization for complex embedded systems
- Fast Performance: 133MHz clock frequency with 7ns access time for rapid data retrieval
- Flexible Interface: SPI Quad I/O, QPI, and DTR modes for optimized throughput
- Industrial Grade: -40°C to 85°C operating temperature range for harsh environments
- Compact Footprint: 8-DFN (6x8mm) surface mount package with exposed pad for thermal management
- Wide Voltage Range: 2.7V to 3.6V supply voltage for system flexibility
- Guaranteed Authenticity: Direct from authorized distributors with full manufacturer documentation and traceability
Applications
- Aerospace & Defense Systems
- Automotive Electronics (ADAS, Infotainment)
- Industrial Automation & Control
- Telecommunications Infrastructure
- Medical Devices
- IoT & Embedded Systems
Quality Assurance
Every unit is sourced from authorized BYTe Semiconductor distributors with complete manufacturer documentation, ensuring authenticity, traceability, and long-term product availability for critical design-in applications.
| Product attributes | Property Value |
| Manufacturer | BYTe Semiconductor |
| Product Series | |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 150µs, 2.4ms |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Supplier Device Package | 8-DFN (6x8) |
| ROHS |  |
BY25FQM1GESEIG(R).pdf
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