BYTe Semiconductor BY25FQM512ESFIG(T)

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Product attributes Property Value
Manufacturer BYTe Semiconductor
Product Series
Packaging Tube | Tube
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface SPI - Quad I/O, QPI, DTR
Clock Frequency 166 MHz
Write Cycle Time - Word, Page 100µs, 2.4ms
Access Time 5 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOP
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

BY25FQM512ESFIG(T) - 512Mbit NOR Flash Memory IC

The BY25FQM512ESFIG(T) from BYTe Semiconductor is a high-performance 512Mbit NOR Flash memory solution designed for demanding aerospace, automotive, industrial, and telecommunications applications. This non-volatile memory IC features SPI Quad I/O interface with QPI and DTR support, delivering reliable data storage with fast access times and wide operating temperature range.

Key Features:

  • High-Density Storage: 512Mbit (64M x 8) memory organization
  • Fast Performance: 166MHz clock frequency with 5ns access time
  • Flexible Interface: SPI Quad I/O, QPI, and DTR support
  • Wide Voltage Range: 2.7V to 3.6V operation
  • Industrial Temperature: -40°C to 85°C operating range
  • Compact Package: 16-SOIC surface mount package
  • RoHS Compliant: Environmentally friendly manufacturing

Applications:

Ideal for code storage, data logging, firmware updates, and configuration storage in embedded systems requiring long-term data retention and high reliability.

Quality Assurance:

All units are sourced from authorized distributors with full manufacturer documentation, traceability, and long lifecycle support. Each component is verified for authenticity and backed by comprehensive technical resources.