BYTe Semiconductor BY25FQM512ESWIG(R)

BY25FQM512ESWIG(R) - High-Performance 512Mbit Quad SPI NOR Flash Memory

The BY25FQM512ESWIG(R) from BYTe Semiconductor delivers reliable, high-speed non-volatile storage for demanding aerospace, automotive, industrial, and telecommunications applications. This 512Mbit NOR Flash memory features Quad SPI interface with DTR support, enabling data transfer rates up to 166MHz for mission-critical systems requiring fast boot times and code execution.

Key Features & Benefits

• 512Mbit (64M x 8) Memory Capacity: Ample storage for firmware, boot code, and configuration data
• Quad I/O SPI with QPI & DTR: High-speed interface supporting 166MHz clock frequency for rapid data access
• Ultra-Fast Access Time: 5ns access time ensures minimal latency for time-sensitive operations
• Wide Operating Temperature Range: -40°C to 85°C (TA) for industrial and automotive environments
• Low Power Operation: 2.7V to 3.6V supply voltage for energy-efficient designs
• Compact Surface Mount Package: 8-WSON (5x6mm) with exposed pad for superior thermal performance
• RoHS Compliant: Environmentally responsible manufacturing meets global standards

Applications

Ideal for FPGA configuration storage, embedded system boot code, automotive ECU firmware, industrial control systems, telecommunications equipment, and any application requiring reliable, high-speed non-volatile memory with extended temperature operation.

Quality & Authenticity Guarantee

Sourced from authorized distributors with full manufacturer documentation, traceability, and long lifecycle support. Each unit ships in factory-sealed Tape & Reel packaging to ensure authenticity and reliability for your critical designs.

• BY25FQM512ESWIG(R).pdf