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CY7C1019B-12VC High-Speed 1Mbit Asynchronous SRAM

The CY7C1019B-12VC from Infineon Technologies is a high-performance 1-megabit static random access memory (SRAM) organized as 128K x 8 bits. This asynchronous SRAM features an ultra-fast 12ns access time, making it ideal for applications requiring rapid data access and low-latency memory operations.

Designed for industrial and embedded systems, this surface-mount memory IC operates reliably across a wide voltage range (4.5V to 5.5V) and temperature range (0°C to 70°C). The parallel interface provides straightforward integration into legacy and modern digital systems requiring high-speed volatile memory storage.

Applications & Use Cases

This SRAM is well-suited for cache memory, buffer storage, data logging systems, industrial controllers, and embedded applications where fast, reliable volatile memory is essential. The 32-SOJ package provides robust mechanical stability for demanding industrial environments.

Related Products & Resources

Explore our complete range of memory semiconductor devices including EEPROM, Flash, DRAM, and SRAM solutions from 64 bits to 6 terabits. Visit HQICKEY for our full catalog of premium semiconductor components for industrial and embedded electronics. Stay updated with the latest industry insights and product announcements on our NEWS blog.

Product attributes Property Value
Manufacturer Infineon Technologies
Product Series
Packaging Tube |
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 1Mbit
Memory Organization 128K x 8
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 12ns
Access Time 12 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package 32-SOJ