GigaDevice Semiconductor (HK) Limited GD25LB512MEYIGY

GigaDevice GD25LB512MEYIGY - High-Performance 512Mbit SPI NOR Flash Memory

The GD25LB512MEYIGY from GigaDevice Semiconductor is a high-density, high-performance 512Mbit NOR Flash memory featuring advanced SPI Quad I/O, QPI, and DTR interfaces. Engineered for reliability and speed, this non-volatile flash memory operates at up to 133MHz clock frequency and supports a wide voltage range of 1.65V to 2V, making it ideal for power-sensitive embedded systems, industrial automation, automotive electronics, telecommunications equipment, and IoT devices.

Key Features & Benefits

• High Density: 512Mbit (64M x 8) memory organization provides ample storage for firmware, data logging, and code execution
• Fast Performance: 133MHz clock frequency with Quad I/O and QPI support enables rapid data access and transfer
• Low Power Operation: 1.65V to 2V supply voltage optimizes energy efficiency for battery-powered and portable applications
• Industrial Temperature Range: -40°C to 85°C operating range ensures reliable performance in harsh environments
• Compact Footprint: 8-WSON (6x8mm) surface mount package saves valuable PCB space
• SLC NAND Technology: Single-Level Cell architecture delivers superior endurance and data retention

Typical Applications

This versatile NOR Flash memory is perfectly suited for embedded systems requiring reliable non-volatile storage, including industrial controllers, automotive ECUs, network routers, medical devices, smart meters, and consumer electronics. The wide operating temperature range and robust design make it an excellent choice for mission-critical applications demanding long-term reliability and data integrity.

All specifications are guaranteed by GigaDevice Semiconductor. This product is RoHS compliant and backed by full traceability documentation for quality assurance.

• GD25LB512MEYIGY.pdf