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Renesas Electronics Corporation

HIP2100EIBZ

HIP2100EIBZ

Normaler Preis Dhs. 19.63
Normaler Preis Dhs. 20.68 Verkaufspreis Dhs. 19.63
Sale Ausverkauft
Quantity Unit Price Total Price
1 Dhs. 19.63 AED Dhs. 19.63 AED
15+ Dhs. 19.03 AED Dhs. 285.45 AED
25+ Dhs. 18.61 AED Dhs. 465.25 AED
50+ Dhs. 17.58 AED Dhs. 879.00 AED
100+ Dhs. 15.51 AED Dhs. 1,551.00 AED
N+ Dhs. 3.10 AED Price Inquiry
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Product attributes Property Value
Manufacturer Renesas Electronics Corporation
Product Series
Packaging Tube |
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 9V ~ 14V
Logic Voltage - VIL, VIH 4V, 7V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 114 V
Rise / Fall Time (Typ) 10ns, 10ns
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package 8-SOIC-EP
ROHS

Datasheets:     HIP2100EIBZ .pdf

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