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IDT71V256SA10YG - High-Performance 256Kbit Asynchronous SRAM Memory IC

The IDT71V256SA10YG from Renesas Electronics Corporation is a high-performance 256Kbit asynchronous SRAM memory IC designed for embedded systems and industrial applications requiring fast, reliable volatile memory. With a blazing-fast 10ns access time and 32K x 8 memory organization, this SRAM delivers exceptional performance for data buffering, cache memory, and real-time processing applications.

Key Features & Benefits

  • Ultra-Fast Access: 10ns access time ensures minimal latency for time-critical operations
  • Flexible Organization: 32K x 8 configuration provides optimal byte-wide data handling
  • Low Power Operation: 3V to 3.6V supply voltage range for energy-efficient designs
  • Industrial Temperature Range: Operates reliably from 0°C to 70°C (TA)
  • Surface Mount Package: 28-BSOJ/28-SOJ package for automated assembly and space-efficient PCB layouts
  • Parallel Interface: Standard parallel interface for straightforward integration with microcontrollers and processors

Ideal Applications

This asynchronous SRAM is perfect for embedded systems, industrial controllers, telecommunications equipment, networking devices, data acquisition systems, and any application requiring high-speed temporary data storage with parallel access.

Why Choose HQICKEY?

At HQICKEY, we guarantee 100% authentic Renesas components with full traceability and long lifecycle availability. Our dedicated technical support team assists OEMs and system integrators with component selection, design-in support, and reliable worldwide fulfillment for production-scale requirements.

Related Resources

Explore our complete range of Memory ICs for embedded and industrial applications. Visit our homepage to discover our full catalog of authentic semiconductor components. Stay updated with the latest industry insights and technical articles on our News & Technical Blog.

Product attributes Property Value
Manufacturer Renesas Electronics Corporation
Product Series
Packaging Tube |
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 256Kbit
Memory Organization 32K x 8
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package 28-SOJ