Renesas Electronics Corporation IDT71V416VS10Y8

IDT71V416VS10Y8 - High-Performance 4Mbit Asynchronous SRAM

The IDT71V416VS10Y8 from Renesas Electronics is a high-speed 4Mbit asynchronous SRAM memory chip designed for applications requiring fast, reliable volatile memory. With a blazing-fast 10ns access time and organized as 256K x 16, this SRAM delivers exceptional performance for embedded systems, industrial controls, telecommunications equipment, and data buffering applications.

Key Features & Benefits

• Ultra-Fast Access: 10ns access time ensures minimal latency for time-critical operations
• Flexible Organization: 256K x 16 memory architecture optimized for 16-bit data bus systems
• Low Power Operation: 3V to 3.6V supply voltage for energy-efficient designs
• Wide Temperature Range: 0°C to 70°C operating temperature suitable for commercial applications
• Surface Mount Design: 44-BSOJ/44-SOJ package for automated assembly and space-efficient PCB layouts
• Parallel Interface: Simple, high-speed parallel memory interface for easy integration
• Convenient Packaging: Available in tape & reel for high-volume manufacturing

Ideal Applications

This SRAM is perfect for networking equipment, industrial automation systems, medical devices, automotive electronics, telecommunications infrastructure, and any application requiring high-speed data buffering or cache memory.

Why Choose This SRAM? Backed by Renesas Electronics' reputation for quality and reliability, the IDT71V416VS10Y8 offers proven performance with full traceability and long lifecycle support—essential for mission-critical applications and designs requiring extended product availability.

• IDT71V416VS10Y8.pdf