Renesas Electronics Corporation IDT71V416VS12BE8

IDT71V416VS12BE8 - High-Performance 4Mbit Asynchronous SRAM

The IDT71V416VS12BE8 is a high-reliability 4Mbit asynchronous SRAM memory IC from Renesas Electronics Corporation, designed for applications requiring fast access times and low power consumption. With a 12ns access time and 256K x 16 memory organization, this component delivers exceptional performance for aerospace, automotive, industrial, telecommunications, and medical applications.

Key Features & Benefits

• Ultra-fast 12ns access time - Ideal for time-critical applications requiring rapid data retrieval
• 4Mbit memory capacity with 256K x 16 organization - Optimal balance of density and performance
• Low voltage operation (3V to 3.6V) - Reduces power consumption and heat generation
• Surface mount 48-CABGA package - Space-efficient design for compact PCB layouts
• Parallel interface - Simple integration with existing system architectures
• Industrial temperature range (0°C to 70°C) - Reliable operation in demanding environments
• Tape & Reel packaging - Ready for automated assembly processes

Applications

This SRAM is perfectly suited for embedded systems, networking equipment, industrial controllers, medical devices, automotive electronics, and any application requiring high-speed volatile memory with long lifecycle support.

Why Choose Our Authorized Distribution

As an authorized Renesas distributor, we provide genuine components with full traceability, comprehensive technical support, and design-in resources to ensure your project success. Every unit comes with manufacturer warranty and compliance documentation.

• IDT71V416VS12BE8.pdf