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IDT71V416VS12BEI8 - High-Performance 4Mbit Asynchronous SRAM

The IDT71V416VS12BEI8 from Renesas Electronics Corporation is a high-speed, low-power 4Mbit asynchronous SRAM designed for demanding embedded applications requiring fast, reliable volatile memory. With a blazing-fast 12ns access time and 256K x 16 memory organization, this SRAM delivers exceptional performance for industrial, telecommunications, automotive, and aerospace systems.

Key Features & Benefits

  • Ultra-Fast Access: 12ns access time ensures rapid data retrieval for time-critical applications
  • Flexible Memory Organization: 256K x 16 configuration optimized for 16-bit data bus architectures
  • Wide Operating Range: -40°C to 85°C temperature range for industrial-grade reliability
  • Low Voltage Operation: 3V to 3.6V supply voltage for power-efficient designs
  • Compact Surface Mount Package: 48-CABGA (9x9mm) footprint saves valuable board space
  • Parallel Interface: Simple, straightforward integration with standard microcontrollers and processors
  • Tape & Reel Packaging: Ready for automated assembly and high-volume production

Ideal Applications

This high-reliability SRAM is perfect for aerospace avionics, automotive ECUs, industrial control systems, telecommunications equipment, medical devices, networking hardware, and any application requiring fast, dependable volatile memory with extended lifecycle support.

Why Choose Renesas IDT71V416VS12BEI8?

Renesas Electronics is a trusted leader in semiconductor solutions, offering long-term product availability, comprehensive technical support, and proven quality. The IDT71V416VS12BEI8 combines speed, reliability, and industrial-grade performance in a compact package, making it the ideal choice for engineers who demand the best.

All specifications are subject to manufacturer's datasheet. Contact us for availability, pricing, and technical support.

Product attributes Property Value
Manufacturer Renesas Electronics Corporation
Product Series
Packaging Tape & Reel (TR) | Tape & Reel (TR)
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 12ns
Access Time 12 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-CABGA (9x9)