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Normaler Preis Dhs. 10.49
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IS61WV12816BLL-12TLI-TR - High-Performance 2Mbit Asynchronous SRAM

The IS61WV12816BLL-12TLI-TR from ISSI (Integrated Silicon Solution Inc) is a high-reliability 2Mbit asynchronous SRAM designed for demanding applications in aerospace, automotive, industrial, medical, and telecommunications sectors. This memory device delivers exceptional performance with a 12ns access time and operates reliably across extended temperature ranges.

Key Features & Benefits

  • High-Speed Performance: 12ns access time ensures rapid data retrieval for time-critical applications
  • Flexible Organization: 128K x 16 memory architecture optimized for 16-bit data bus systems
  • Wide Operating Range: 3V to 3.6V supply voltage with -40°C to 85°C temperature tolerance
  • Reliable Parallel Interface: Proven asynchronous SRAM technology for embedded systems
  • Space-Efficient Package: 44-TSOP II surface mount design for compact PCB layouts
  • RoHS Compliant: Environmentally friendly manufacturing meets global standards

Ideal Applications

This SRAM component excels in applications requiring fast, reliable volatile memory storage including industrial controllers, automotive ECUs, medical devices, telecommunications equipment, and aerospace systems. The asynchronous interface simplifies integration with microcontrollers, FPGAs, and other embedded processors.

Why Choose HQICKEY?

At HQICKEY, we specialize in providing high-reliability semiconductor components for mission-critical applications. Our extensive memory solutions catalog includes SRAM, DRAM, Flash, and EEPROM devices from leading manufacturers worldwide.

Browse our complete range of memory semiconductor devices or visit our technical blog for application notes, design guides, and industry insights.

Need technical support or volume pricing? Contact our team of semiconductor specialists today.

Product attributes Property Value
Manufacturer ISSI, Integrated Silicon Solution Inc
Product Series
Packaging Tape & Reel (TR) |
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 2Mbit
Memory Organization 128K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 12ns
Access Time 12 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY