Rohm Semiconductor MSM5117400F-60J3-7

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MSM5117400F-60J3-7 - High-Performance 16Mbit DRAM Memory IC

The MSM5117400F-60J3-7 from Rohm Semiconductor is a high-performance 16Mbit DRAM memory IC featuring a 4M x 4 organization and parallel interface. With a fast 30ns access time and 110ns write cycle time, this volatile memory solution is ideal for aerospace, automotive, industrial, and telecommunications applications requiring reliable, high-speed data storage.

Key Features:

  • Memory Capacity: 16Mbit (4M x 4 organization)
  • Fast Access Time: 30ns for rapid data retrieval
  • Parallel Interface: Efficient data transfer
  • Operating Voltage: 4.5V to 5.5V
  • Temperature Range: 0°C to 70°C (TA)
  • Write Cycle Time: 110ns
  • RoHS Compliant: Environmentally friendly

Applications:

This DRAM IC is perfectly suited for embedded systems, industrial controllers, telecommunications equipment, automotive electronics, and legacy system replacements where reliable parallel memory is essential.

Authorized Distributor Benefits:

  • 100% authentic Rohm Semiconductor components
  • Full manufacturer documentation and traceability
  • Long lifecycle availability support
  • Global shipping through authorized channels
  • Technical design-in support available
Product attributes Property Value
Manufacturer Rohm Semiconductor
Product Series
Packaging Tube | Tube
Memory Type Volatile
Memory Format DRAM
Technology DRAM
Memory Size 16Mbit
Memory Organization 4M x 4
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 110ns
Access Time 30 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Qualification -
Mounting Type -
Package / Case -
Supplier Device Package -
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY