Infineon Technologies S72XS256RE0AHBH20

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Infineon S72XS256RE0AHBH20 - High-Performance Dual Memory Solution

The S72XS256RE0AHBH20 from Infineon Technologies combines 256Mbit FLASH and 256Mbit DDR DRAM in a single, compact 133-FBGA package. Engineered for demanding applications in automotive, industrial, telecommunications, and aerospace sectors, this XS-R Series memory IC delivers reliable performance across extended temperature ranges.

Key Features & Benefits

  • Dual Memory Architecture: 256Mbit non-volatile FLASH + 256Mbit volatile DDR DRAM for flexible data storage and processing
  • High-Speed Operation: 108MHz clock frequency with parallel interface for rapid data access
  • Industrial-Grade Reliability: Operating temperature range of -40°C to 85°C (TA) ensures consistent performance in harsh environments
  • Compact Surface Mount Design: 133-VFBGA (8x8mm) package optimizes board space utilization
  • Low Voltage Operation: 1.7V to 1.95V supply voltage for energy-efficient designs
  • RoHS Compliant: Meets environmental standards for global deployment

Ideal Applications

Perfect for automotive ECUs, industrial controllers, medical devices, telecommunications equipment, and aerospace systems requiring reliable, high-performance memory with long lifecycle support and full traceability.

Product attributes Property Value
Manufacturer Infineon Technologies
Product Series XS-R
Packaging Tray | Tray
Memory Type Non-Volatile, Volatile
Memory Format FLASH, RAM
Technology FLASH, DRAM
Memory Size 256Mbit (FLASH), 256Mbit (DDR DRAM)
Memory Organization -
Memory Interface Parallel
Clock Frequency 108 MHz
Write Cycle Time - Word, Page -
Access Time -
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 133-VFBGA
Supplier Device Package 133-FBGA (8x8)
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

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