Kioxia America, Inc. THGJFMT2E46BATV

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Normaler Preis Dhs. 402.85
Normaler Preis Dhs. 424.06 Verkaufspreis Dhs. 402.85
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Quantity Unit Price Total Price
1 Dhs. 402.85 Dhs. 402.85
15+ Dhs. 390.14 Dhs. 5,852.10
25+ Dhs. 381.65 Dhs. 9,541.25
50+ Dhs. 360.45 Dhs. 18,022.50
100+ Dhs. 318.05 Dhs. 31,805.00
N+ Dhs. 63.61 Price Inquiry
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Kioxia THGJFMT2E46BATV - High-Density UFS 4.0 NAND Flash Memory

The Kioxia THGJFMT2E46BATV is a premium 4Tbit (512GB) UFS 4.0 NAND flash memory solution engineered for high-performance applications in aerospace, automotive, industrial, and telecommunications sectors. Featuring advanced TLC (Triple-Level Cell) technology and a 2.32GHz clock frequency, this component delivers exceptional speed and reliability for mission-critical systems.

Key Features & Benefits

  • Ultra-High Capacity: 4Tbit (512GB) memory size with 512G x 8 organization
  • Latest UFS 4.0 Interface: Industry-leading 2.32GHz clock frequency for maximum throughput
  • Advanced TLC NAND Technology: Optimized balance of density, performance, and endurance
  • Wide Operating Range: -25°C to 85°C for demanding industrial environments
  • Authentic Kioxia Quality: Authorized distributor stock with full manufacturer documentation and traceability
  • Long Lifecycle Support: Guaranteed availability for extended product lifecycles

Applications

Ideal for automotive infotainment systems, industrial IoT devices, aerospace data recorders, telecommunications infrastructure, and other high-reliability embedded applications requiring proven NAND flash technology.

Why Choose Our Authorized Stock?

We provide genuine Kioxia components sourced directly from authorized distributors, ensuring 100% authenticity, full manufacturer documentation, and complete supply chain traceability. Every unit is backed by our commitment to quality and long-term product availability for your critical applications.

Product attributes Property Value
Manufacturer Kioxia America, Inc.
Product Series
Packaging Tray | Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (TLC)
Memory Size 4Tbit
Memory Organization 512G x 8
Memory Interface UFS 4.0
Clock Frequency 2.32 GHz
Write Cycle Time - Word, Page -
Access Time -
Voltage - Supply 2.4V ~ 2.7V
Operating Temperature -25°C ~ 85°C
Grade -
Qualification -
Mounting Type -
Package / Case -
Supplier Device Package -

No datasheet available. Please contact sales@hqickey.com for the latest datasheet.