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Renesas Electronics Corporation

HIP6603BECB

HIP6603BECB

Prix habituel Dhs. 355,884.59
Prix habituel Dhs. 374,615.36 Prix promotionnel Dhs. 355,884.59
Promotion Épuisé
Quantity Unit Price Total Price
1 Dhs. 355,884.59 AED Dhs. 355,884.59 AED
15+ Dhs. 344,646.13 AED Dhs. 5,169,691.95 AED
25+ Dhs. 337,153.82 AED Dhs. 8,428,845.50 AED
50+ Dhs. 318,423.06 AED Dhs. 15,921,153.00 AED
100+ Dhs. 280,961.52 AED Dhs. 28,096,152.00 AED
N+ Dhs. 56,192.30 AED Price Inquiry
Frais d'expédition calculés à l'étape de paiement.
Quantité

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Product attributes Property Value
Manufacturer Renesas Electronics Corporation
Product Series
Packaging |
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 10.8V ~ 13.2V
Logic Voltage - VIL, VIH -
Current - Peak Output (Source, Sink) -
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 15 V
Rise / Fall Time (Typ) 20ns, 20ns
Operating Temperature 0°C ~ 125°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package 8-SOIC-EP

Datasheets:     HIP6603BECB .pdf

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