Renesas Electronics Corporation 7164S20YG8
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 355,884.59 | Dhs. 355,884.59 |
| 15+ | Dhs. 344,646.13 | Dhs. 5,169,691.95 |
| 25+ | Dhs. 337,153.82 | Dhs. 8,428,845.50 |
| 50+ | Dhs. 318,423.06 | Dhs. 15,921,153.00 |
| 100+ | Dhs. 280,961.52 | Dhs. 28,096,152.00 |
| N+ | Dhs. 56,192.30 | Price Inquiry |
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Renesas 7164S20YG8 - High-Performance 64Kbit Asynchronous SRAM Memory IC
The 7164S20YG8 from Renesas Electronics Corporation is a high-reliability 64Kbit static random-access memory (SRAM) designed for demanding aerospace, automotive, industrial, medical, and telecommunications applications. This asynchronous SRAM features an 8K x 8 memory organization with ultra-fast 20ns access time, making it ideal for embedded systems requiring rapid data access and reliable volatile memory storage.
Engineered for durability and performance, the 7164S20YG8 operates across a 4.5V to 5.5V supply voltage range and functions reliably in temperatures from 0°C to 70°C. Its surface-mount 28-BSOJ package (7.62mm width) ensures compatibility with modern PCB assembly processes while maintaining robust electrical characteristics for mission-critical applications.
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| Product attributes | Property Value |
| Manufacturer | Renesas Electronics Corporation |
| Product Series | |
| Packaging | | |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 64Kbit |
| Memory Organization | 8K x 8 |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 20ns |
| Access Time | 20 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 28-BSOJ (0.300", 7.62mm Width) |
| Supplier Device Package | 28-SOJ |
| ROHS |  |
7164S20YG8.pdf