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71V016SA12YG8 - High-Performance 1Mbit Asynchronous SRAM

The 71V016SA12YG8 from Renesas Electronics is a high-reliability 1Mbit asynchronous SRAM designed for mission-critical embedded systems across aerospace, automotive, industrial, and telecommunications applications. This parallel interface memory device delivers exceptional performance with 12ns access time and operates reliably across 0°C to 70°C temperature range.

Key Features & Benefits

  • Ultra-Fast Access: 12ns access time ensures rapid data retrieval for time-sensitive applications
  • Flexible Organization: 64K x 16 memory architecture optimized for 16-bit microprocessor systems
  • Wide Voltage Range: 3V to 3.6V operation compatible with modern low-power designs
  • Surface Mount Package: 44-BSOJ (10.16mm width) for efficient PCB layout and automated assembly
  • Industrial Grade: Proven reliability for demanding embedded system environments

Ideal Applications

Perfect for high-speed data buffering, cache memory, embedded controllers, industrial automation systems, automotive electronics, and telecommunications infrastructure where fast, reliable volatile memory is essential.

Related Products & Resources

Explore our complete range of Memory Semiconductor Devices including EEPROM, Flash, DRAM, and SRAM solutions from 64b to 6Tb capacity. Visit HQICKEY for premium semiconductors for mission-critical applications. Stay updated with the latest industry insights on our News Blog.

Product attributes Property Value
Manufacturer Renesas Electronics Corporation
Product Series
Packaging |
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 1Mbit
Memory Organization 64K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 12ns
Access Time 12 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package 44-SOJ
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