Renesas Electronics Corporation 71V416L10YGI
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 16.93 | Dhs. 16.93 |
| 15+ | Dhs. 16.40 | Dhs. 246.00 |
| 25+ | Dhs. 16.05 | Dhs. 401.25 |
| 50+ | Dhs. 15.16 | Dhs. 758.00 |
| 100+ | Dhs. 13.37 | Dhs. 1,337.00 |
| N+ | Dhs. 2.67 | Price Inquiry |
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Renesas 71V416L10YGI - High-Performance 4Mbit Asynchronous SRAM
The 71V416L10YGI from Renesas Electronics is a high-speed 4Mbit static RAM designed for demanding embedded applications requiring fast, reliable memory access. With an exceptional 10ns access time and asynchronous parallel interface, this SRAM delivers superior performance for industrial control systems, telecommunications equipment, and high-speed data buffering applications.
Key Features & Benefits
- Ultra-Fast Access: 10ns access time ensures minimal latency for time-critical operations
- Optimal Memory Organization: 256K x 16 configuration provides flexible data handling
- Wide Operating Range: -40°C to 85°C temperature range for industrial-grade reliability
- Low Voltage Operation: 3V to 3.6V supply voltage for energy-efficient designs
- Surface Mount Package: 44-BSOJ/SOJ package for automated assembly and space savings
- Asynchronous Interface: Simplified timing and control for easy system integration
Ideal Applications
Perfect for high-speed cache memory, network routers and switches, industrial automation controllers, medical imaging equipment, aerospace and defense systems, and telecommunications infrastructure.
Why Choose Renesas SRAM?
Renesas Electronics is a global leader in semiconductor solutions, known for exceptional quality, long lifecycle support, and proven reliability in mission-critical applications. The 71V416L10YGI represents decades of memory design expertise, offering consistent performance and full traceability for aerospace, automotive, and industrial sectors.
Need technical support or volume pricing? Contact our team for datasheets, application notes, and custom solutions tailored to your project requirements.
| Product attributes | Property Value |
| Manufacturer | Renesas Electronics Corporation |
| Product Series | |
| Packaging | Tube | Tube |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 4Mbit |
| Memory Organization | 256K x 16 |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 44-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 44-SOJ |
71V416L10YGI.pdf