Renesas Electronics Corporation 71V416L10YGI8

Renesas 71V416L10YGI8 - High-Performance 4Mbit Asynchronous SRAM

The 71V416L10YGI8 from Renesas Electronics is a high-speed, low-power 4-megabit static random access memory (SRAM) designed for demanding embedded applications requiring fast, reliable volatile memory with parallel interface access.

Key Features

• Fast Access Time: 10ns access time ensures rapid data retrieval for time-critical applications
• Flexible Organization: 256K x 16 memory architecture optimized for 16-bit data bus systems
• Wide Operating Range: Industrial temperature grade (-40°C to 85°C) suitable for harsh environments
• Low Voltage Operation: 3V to 3.6V supply voltage for power-efficient designs
• Surface Mount Package: 44-BSOJ package for automated assembly and space-efficient PCB layouts

Typical Applications

• Automotive electronics and ADAS systems
• Industrial control and automation equipment
• Telecommunications infrastructure
• Medical diagnostic and monitoring devices
• Aerospace and defense systems
• High-speed data buffering and cache memory

Quality & Reliability

As an authorized distributor of Renesas Electronics components, we provide fully traceable, factory-fresh parts with complete documentation and lifecycle support. Each unit is supplied in tape and reel packaging for automated pick-and-place assembly.

Design Support

Our technical team can assist with component selection, design-in support, and application guidance to ensure optimal performance in your system. Contact us for datasheets, reference designs, and volume pricing.

• 71V416L10YGI8.pdf