BYTe Semiconductor BY25D40ESOIG(T)

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Product attributes Property Value
Manufacturer BYTe Semiconductor
Product Series
Packaging Tube | Tube
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 4Mbit
Memory Organization 512K x 8
Memory Interface SPI - Dual I/O
Clock Frequency 120 MHz
Write Cycle Time - Word, Page 3.6ms
Access Time 7 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

BY25D40ESOIG(T) - 4Mbit NOR Flash Memory IC

The BY25D40ESOIG(T) from BYTe Semiconductor is a high-performance 4Mbit NOR Flash memory device featuring SPI Dual I/O interface and 120MHz clock frequency. This surface-mount IC delivers reliable non-volatile storage for embedded systems, industrial controls, automotive applications, and telecommunications equipment requiring fast access times and wide operating temperature range.

Key Features:

  • 4Mbit (512K x 8) memory capacity - Ample storage for firmware, configuration data, and code execution
  • SPI Dual I/O interface - Enhanced data throughput with dual I/O serial peripheral interface
  • 120MHz clock frequency - Fast read operations with 7ns access time
  • Wide voltage range (2.7V to 3.6V) - Compatible with 3.3V and lower-voltage systems
  • Industrial temperature grade (-40°C to 85°C) - Reliable operation in harsh environments
  • 8-TSSOP package - Compact surface-mount footprint for space-constrained designs
  • 3.6ms write cycle time - Efficient programming performance

Applications:

Ideal for BIOS storage, embedded firmware, boot code, configuration data, data logging, industrial automation, automotive electronics, IoT devices, and telecommunications infrastructure.

Quality & Compliance:

Authorized distributor stock with full manufacturer traceability and documentation. RoHS compliant for environmental safety.