BYTe Semiconductor BY25FQ16ELSIG(R)

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Product attributes Property Value
Manufacturer BYTe Semiconductor
Product Series
Packaging Tape & Reel (TR) | Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 16Mbit
Memory Organization 2M x 8
Memory Interface SPI - Quad I/O, QPI, DTR
Clock Frequency 166 MHz
Write Cycle Time - Word, Page 100µs, 1.5ms
Access Time 4 ns
Voltage - Supply 1.65V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package 8-SOP
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

BY25FQ16ELSIG(R) - 16Mbit NOR Flash Memory IC

The BY25FQ16ELSIG(R) from BYTe Semiconductor is a high-performance 16Mbit NOR Flash memory device featuring advanced SPI Quad I/O, QPI, and DTR interfaces. Designed for industrial, automotive, and embedded applications requiring reliable non-volatile storage with fast access times and low power consumption.

Key Features

  • 16Mbit (2M x 8) memory capacity - Ample storage for firmware, configuration data, and code execution
  • SPI Quad I/O, QPI, DTR interface - High-speed serial communication up to 166MHz for rapid data transfer
  • 1.65V to 1.95V supply voltage - Low-power operation ideal for battery-powered and energy-efficient designs
  • -40°C to 85°C operating range - Industrial-grade temperature tolerance for harsh environments
  • 4ns access time - Ultra-fast read performance for time-critical applications
  • 8-SOIC surface mount package - Compact footprint for space-constrained PCB layouts

Applications

Ideal for automotive ECUs, industrial controllers, IoT devices, embedded systems, firmware storage, BIOS/boot code, and data logging applications requiring reliable, fast, non-volatile memory.

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