BYTe Semiconductor BY25FQM512ESEIG(R)

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BYTe Semiconductor BY25FQM512ESEIG(R) - High-Performance 512Mbit NOR Flash Memory

The BY25FQM512ESEIG(R) is a high-density, high-performance NOR Flash memory solution from BYTe Semiconductor, designed for demanding industrial, automotive, and telecommunications applications. This 512Mbit (64M x 8) Flash IC features advanced Quad SPI interface with DTR support, delivering exceptional read/write performance at 166MHz clock frequency.

Key Features & Benefits:

  • High-Density Storage: 512Mbit capacity organized as 64M x 8, ideal for code storage and data logging
  • Fast Performance: 166MHz clock frequency with 5ns access time for rapid data retrieval
  • Advanced Interface: SPI Quad I/O, QPI, and DTR modes for flexible integration
  • Wide Operating Range: 2.7V to 3.6V supply voltage, -40°C to 85°C temperature range
  • Compact Package: Space-saving 8-WSON (8x6mm) surface mount package
  • Industrial Grade: Reliable performance for mission-critical applications

Applications:

Perfect for FPGA configuration, embedded systems, IoT devices, automotive electronics, industrial controllers, and telecommunications equipment requiring reliable non-volatile memory storage.

Authenticity Guaranteed:

All units sourced from authorized distributors with full manufacturer documentation and traceability. RoHS compliant for environmental compliance.

Product attributes Property Value
Manufacturer BYTe Semiconductor
Product Series
Packaging Tape & Reel (TR) | Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface SPI - Quad I/O, QPI, DTR
Clock Frequency 166 MHz
Write Cycle Time - Word, Page 100µs, 2.4ms
Access Time 5 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-WSON (8x6)
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY