BYTe Semiconductor BY25Q256ESSIG(R)

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BY25Q256ESSIG(R) - 256Mbit NOR Flash Memory IC

The BY25Q256ESSIG(R) is a high-performance 256Mbit (32M x 8) NOR Flash memory IC from BYTe Semiconductor, designed for demanding aerospace, automotive, industrial, and telecommunications applications. This industrial-grade component features Quad SPI interface with DTR and QPI support, delivering reliable non-volatile storage with fast 100MHz clock frequency and 7ns access time.

Key Features & Benefits

  • High-Density Storage: 256Mbit capacity organized as 32M x 8 for flexible data management
  • Fast Performance: 100MHz clock frequency with 7ns access time ensures rapid data retrieval
  • Advanced Interface: Quad I/O SPI with QPI and DTR modes for maximum throughput
  • Wide Operating Range: 2.7V to 3.6V supply voltage, -40°C to 85°C temperature range
  • Industrial Reliability: RoHS compliant, surface mount 8-SOIC package for robust integration
  • Authentic Sourcing: Authorized distributor stock with full manufacturer documentation and traceability

Applications

Ideal for firmware storage, boot code, configuration data, and embedded system applications requiring reliable, long-lifecycle non-volatile memory solutions in harsh environments.

Product attributes Property Value
Manufacturer BYTe Semiconductor
Product Series
Packaging Tape & Reel (TR) | Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 256Mbit
Memory Organization 32M x 8
Memory Interface SPI - Quad I/O, QPI, DTR
Clock Frequency 100 MHz
Write Cycle Time - Word, Page 50µs, 2.4ms
Access Time 7 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package 8-SOP
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY