BYTe Semiconductor BY25QM512FSEIG(R)

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BY25QM512FSEIG(R) - High-Performance 512Mbit SPI NOR Flash Memory

The BY25QM512FSEIG(R) from BYTe Semiconductor is a premium 512Mbit (64M x 8) SPI Quad I/O NOR Flash memory device engineered for mission-critical applications in aerospace, automotive, industrial automation, medical equipment, and telecommunications systems. This high-reliability non-volatile memory solution delivers exceptional performance with a 100MHz clock frequency and 7ns access time, making it ideal for demanding embedded systems requiring fast data retrieval and long-term data retention.

Key Features & Benefits

  • High-Density Storage: 512Mbit capacity organized as 64M x 8, providing ample space for firmware, configuration data, and critical system parameters
  • Fast Performance: 100MHz clock frequency with 7ns access time ensures rapid data access for time-sensitive applications
  • Quad I/O Interface: SPI Quad I/O interface maximizes throughput while minimizing pin count
  • Wide Operating Range: Functions reliably across -40°C to 85°C temperature range with 2.7V to 3.6V supply voltage
  • Compact Footprint: Surface-mount 8-WSON (8x6mm) package with exposed pad for enhanced thermal performance
  • Industrial-Grade Reliability: 3ms write cycle time ensures consistent performance in demanding environments
  • RoHS Compliant: Environmentally friendly design meets global regulatory standards

Applications

This versatile NOR Flash memory is perfectly suited for:

  • Aerospace and defense systems requiring high-reliability data storage
  • Automotive ECUs, infotainment systems, and ADAS applications
  • Industrial automation controllers and programmable logic controllers (PLCs)
  • Medical diagnostic equipment and patient monitoring systems
  • Telecommunications infrastructure and networking equipment
  • IoT devices and edge computing platforms
  • Firmware storage and boot code applications

Why Choose BYTe Semiconductor Flash Memory?

BYTe Semiconductor delivers cutting-edge memory solutions engineered for the most demanding applications. The BY25QM512FSEIG(R) combines high performance, exceptional reliability, and compact design to meet the stringent requirements of modern embedded systems. With proven quality and comprehensive technical support, BYTe Semiconductor is your trusted partner for mission-critical memory solutions.


Related Products & Resources

Explore our comprehensive selection of memory semiconductor devices including DRAM, SRAM, EEPROM, and Flash memory solutions ranging from 64 bits to 6 terabits. Visit our homepage to discover our full range of high-reliability electronic components for aerospace, automotive, industrial, and telecommunications applications. Stay informed about the latest industry trends, product releases, and technical insights by visiting our news blog.

Product attributes Property Value
Manufacturer BYTe Semiconductor
Product Series
Packaging Tape & Reel (TR) |
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 100 MHz
Write Cycle Time - Word, Page 3ms
Access Time 7 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-WSON (8x6)
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY