Infineon Technologies CY62147GE-45ZSXI

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CY62147GE-45ZSXI - 4Mbit Asynchronous SRAM with ECC

The CY62147GE-45ZSXI from Infineon Technologies is a high-performance 4Mbit (256K x 16) asynchronous SRAM featuring Error-Correcting Code (ECC) technology. This industrial-grade memory IC delivers reliable data integrity with 45ns access time, making it ideal for mission-critical applications in aerospace, automotive, industrial control, medical devices, and telecommunications equipment.

Key Features & Benefits

  • Enhanced Reliability: Built-in ECC ensures data integrity in harsh operating environments
  • Fast Performance: 45ns access time and write cycle for responsive system operation
  • Wide Temperature Range: -40°C to +85°C operation for industrial and automotive applications
  • Parallel Interface: Standard asynchronous SRAM interface for easy integration
  • Long Lifecycle Support: Part of Infineon's MOBL™ series with extended availability commitment
  • RoHS Compliant: Meets environmental standards for global deployment

Applications

This SRAM is engineered for systems requiring high reliability and long-term availability: embedded controllers, industrial automation, medical instrumentation, aerospace systems, automotive electronics, and telecom infrastructure.

Product attributes Property Value
Manufacturer Infineon Technologies
Product Series MOBL™
Packaging Tray |
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 45ns
Access Time 45 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY