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CY7C1021B-12VC High-Speed 1Mbit SRAM Memory IC

The CY7C1021B-12VC from Infineon Technologies is a high-performance 1Mbit static random-access memory (SRAM) designed for mission-critical embedded systems requiring fast, reliable data storage. With an ultra-fast 12ns access time and asynchronous architecture, this SRAM delivers exceptional performance for aerospace, automotive, industrial control, and telecommunications applications where speed and reliability are paramount.

Key Features & Benefits

  • Ultra-Fast Performance: 12ns access time enables rapid data retrieval for time-critical applications
  • Flexible Organization: 64K x 16 memory architecture optimized for 16-bit data bus systems
  • Asynchronous Operation: No clock required, simplifying system design and reducing power consumption
  • Wide Voltage Range: 4.5V to 5.5V supply voltage for compatibility with standard 5V systems
  • Industrial Temperature Range: Operates reliably from 0°C to 70°C for demanding environments
  • Surface Mount Package: 44-SOJ package enables automated assembly and space-efficient PCB layouts
  • Parallel Interface: High-speed parallel data access for maximum throughput

Typical Applications

  • Aerospace avionics and flight control systems
  • Automotive engine control units (ECUs) and safety systems
  • Industrial automation and process control
  • Medical diagnostic equipment
  • Telecommunications infrastructure
  • High-speed data buffering and caching
  • Embedded system program storage

Why Choose Infineon SRAM?

Infineon Technologies is a global leader in semiconductor solutions, renowned for delivering high-reliability memory components that meet the stringent requirements of mission-critical applications. The CY7C1021B-12VC combines proven SRAM technology with Infineon's commitment to quality, ensuring consistent performance and long-term availability for your embedded designs.


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Product attributes Property Value
Manufacturer Infineon Technologies
Product Series
Packaging Tube |
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 1Mbit
Memory Organization 64K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 12ns
Access Time 12 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package 44-SOJ