Infineon Technologies CY7C1021CV33-10ZXC

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Infineon CY7C1021CV33-10ZXC - High-Performance 1Mbit SRAM Memory IC

The CY7C1021CV33-10ZXC from Infineon Technologies is a high-speed, low-power 1-megabit Static Random Access Memory (SRAM) designed for demanding embedded systems, industrial automation, automotive electronics, and IoT applications. This asynchronous SRAM delivers exceptional performance with a blazing-fast 10ns access time, making it ideal for cache memory, buffer storage, and real-time data processing.

Key Features & Benefits:

  • Ultra-Fast Access: 10ns access time ensures rapid data retrieval for time-critical applications
  • Flexible Organization: 64K x 16 memory architecture provides versatile data storage options
  • Reliable Performance: Asynchronous SRAM technology with parallel interface for seamless integration
  • Wide Operating Range: 3V to 3.6V supply voltage with 0°C to 70°C operating temperature
  • Industry-Standard Package: 44-TSOP II surface mount package for efficient PCB layout
  • Authentic & Traceable: 100% genuine Infineon components with full lifecycle support

Technical Specifications:

Applications:

  • Industrial control systems and PLCs
  • Automotive electronics and ADAS systems
  • Networking equipment and routers
  • Medical devices and instrumentation
  • IoT edge computing devices
  • High-speed data buffering and caching

Why Choose HQICKEY for Your Semiconductor Needs?

At HQICKEY, we specialize in providing authentic, traceable semiconductor components with long-term availability commitments. Our extensive Memory IC collection includes SRAM, DRAM, Flash, and EEPROM solutions from leading manufacturers like Infineon, Micron, Samsung, and more.

Stay informed about the latest semiconductor technologies, industry trends, and product updates by visiting our technical blog, where we share expert insights and application notes to help you make informed component selection decisions.

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Product attributes Property Value
Manufacturer Infineon Technologies
Product Series
Packaging Bag |
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 1Mbit
Memory Organization 64K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY