Infineon Technologies CY7C1041G18-15ZSXIT

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Infineon CY7C1041G18-15ZSXIT - 4Mbit Asynchronous SRAM Memory IC

The CY7C1041G18-15ZSXIT from Infineon Technologies is a high-performance 4Mbit asynchronous static RAM (SRAM) designed for demanding aerospace, automotive, industrial, and telecommunications applications requiring fast, reliable volatile memory with low power consumption.

Key Features & Benefits

  • High-Speed Performance: 15ns access time and write cycle time for rapid data operations
  • Flexible Memory Organization: 256K x 16 configuration optimized for 16-bit data bus architectures
  • Low Voltage Operation: 1.65V to 2.2V supply voltage range reduces power consumption
  • Wide Temperature Range: -40°C to 85°C operating temperature for industrial-grade reliability
  • Compact Surface Mount Package: 44-TSOP II (10.16mm width) for space-efficient PCB layouts
  • Parallel Interface: Standard asynchronous parallel interface for easy integration
  • RoHS Compliant: Meets environmental standards for lead-free manufacturing

Typical Applications

  • FPGA configuration memory and data buffering
  • High-speed cache memory in embedded systems
  • Network equipment and telecommunications infrastructure
  • Automotive electronics and industrial control systems
  • Aerospace and defense applications requiring extended temperature operation

Why Choose Authorized Distribution?

When you purchase the CY7C1041G18-15ZSXIT through our authorized channel, you receive:

  • Guaranteed Authenticity: Factory-sealed components with full manufacturer traceability
  • Complete Documentation: Datasheets, reference designs, and technical support resources
  • Long Lifecycle Support: Commitment to availability for your production programs
  • Global Shipping: Fast, reliable delivery through authorized logistics partners

Available in Tape & Reel packaging for automated assembly processes.

Product attributes Property Value
Manufacturer Infineon Technologies
Product Series
Packaging Tape & Reel (TR) | Tape & Reel (TR)
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 15ns
Access Time 15 ns
Voltage - Supply 1.65V ~ 2.2V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY