Infineon Technologies CY7C1041GN30-10VXIT

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Infineon CY7C1041GN30-10VXIT - High-Performance 4Mbit Asynchronous SRAM

The CY7C1041GN30-10VXIT from Infineon Technologies is a high-reliability 4Mbit static RAM designed for demanding applications in aerospace, automotive, industrial, telecommunications, and medical sectors. This asynchronous SRAM delivers exceptional performance with 10ns access time and operates across a wide voltage range of 2.2V to 3.6V.

Key Features & Benefits

  • Fast Access Time: 10ns access and write cycle time for high-speed data operations
  • Flexible Memory Organization: 256K x 16 configuration optimized for parallel interface applications
  • Wide Operating Range: Functions reliably from -40°C to 85°C in industrial environments
  • Low Voltage Operation: 2.2V to 3.6V supply voltage for power-efficient designs
  • RoHS Compliant: Meets environmental standards for global deployment
  • Surface Mount Package: 44-BSOJ package for automated assembly and space-efficient PCB layouts

Ideal Applications

Perfect for embedded systems, industrial controllers, telecommunications equipment, medical devices, and aerospace applications requiring reliable, high-speed volatile memory with long lifecycle support.

As an authorized distributor, we provide full traceability, lifecycle support, and technical resources for all Infineon semiconductor components.

Product attributes Property Value
Manufacturer Infineon Technologies
Product Series
Packaging Tape & Reel (TR) | Tape & Reel (TR)
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.2V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package 44-SOJ
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY