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Etron Technology, Inc.

EM6AA160TSE-4IG

Regular price Dhs. 7.08
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Recycling Electronic Components

EM6AA160TSE-4IG - High-Performance DDR SDRAM Memory IC

The EM6AA160TSE-4IG from Etron Technology is a high-performance 256Mbit DDR SDRAM memory integrated circuit designed for embedded systems and industrial applications requiring reliable, fast memory solutions. With a 16M x 16 organization and 250MHz clock frequency, this volatile DRAM delivers exceptional performance for demanding applications.

Key Features & Benefits

  • High-Speed Performance: 250MHz clock frequency with 700ps access time ensures rapid data processing
  • Optimal Memory Configuration: 256Mbit capacity with 16M x 16 organization for flexible system integration
  • Industrial Temperature Range: Operates reliably from -40°C to 85°C, perfect for harsh environments
  • Low Power Operation: 2.3V to 2.7V supply voltage for energy-efficient designs
  • Surface Mount Package: 66-TSOP II package for automated assembly and space-saving PCB layouts
  • RoHS Compliant: Environmentally friendly and meets global regulatory standards

Ideal Applications

This DDR SDRAM is perfectly suited for embedded controllers, industrial automation systems, networking equipment, automotive electronics, and any application requiring fast, reliable volatile memory with extended temperature operation.

Why Choose HQICKEY?

We guarantee 100% authentic Etron components with full traceability, long lifecycle availability, and dedicated technical support. Our global fulfillment network ensures fast delivery for production-scale requirements.

Related Resources

Explore our complete range of Memory ICs for your embedded and industrial projects. Visit our homepage to discover our full catalog of authentic semiconductor components. Stay updated with the latest industry insights and technical guides on our technical blog.

Product attributes Property Value
Manufacturer Etron Technology, Inc.
Product Series
Packaging Tape & Reel (TR) |
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR
Memory Size 256Mbit
Memory Organization 16M x 16
Memory Interface Parallel
Clock Frequency 250 MHz
Write Cycle Time - Word, Page 15ns
Access Time 700 ps
Voltage - Supply 2.3V ~ 2.7V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package 66-TSOP II
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

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