Etron Technology, Inc. EM6HE08EW8D-10H

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Regular price Dhs. 16.93
Regular price Dhs. 17.83 Sale price Dhs. 16.93
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15+ Dhs. 16.40 Dhs. 246.00
25+ Dhs. 16.05 Dhs. 401.25
50+ Dhs. 15.16 Dhs. 758.00
100+ Dhs. 13.37 Dhs. 1,337.00
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Product Overview

The EM6HE08EW8D-10H from Etron Technology is a high-performance 4Gbit DDR3L SDRAM memory solution designed for industrial and embedded applications requiring reliable, low-power volatile memory. This 512M x 8 organized memory chip operates at 933MHz with a 1.35V nominal supply voltage, offering excellent performance in a compact 78-FBGA surface mount package.

Key Features

  • High Capacity: 4Gbit memory density in 512M x 8 configuration
  • Fast Performance: 933MHz clock frequency with 20ns access time
  • Low Power: DDR3L technology with 1.283V to 1.45V supply voltage range
  • Wide Temperature Range: 0°C to 95°C (TC) operating temperature
  • Compact Package: 78-VFBGA (9x10.5mm) surface mount design
  • RoHS Compliant: Environmentally friendly manufacturing

Applications

Ideal for automotive electronics, industrial control systems, telecommunications equipment, medical devices, and embedded computing platforms requiring high-speed, reliable memory performance.

Product attributes Property Value
Manufacturer Etron Technology, Inc.
Product Series
Packaging Tape & Reel (TR) | Tape & Reel (TR)
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Clock Frequency 933 MHz
Write Cycle Time - Word, Page 15ns
Access Time 20 ns
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 78-VFBGA
Supplier Device Package 78-FBGA (9x10.5)
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

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