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GigaDevice Semiconductor (HK) Limited

GD5F2GQ4UF9IGR

Regular price Dhs. 12.03
Regular price Dhs. 12.66 Sale price Dhs. 12.03
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100+ Dhs. 9.50 AED Dhs. 950.00 AED
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Recycling Electronic Components

GD5F2GQ4UF9IGR - High-Reliability 2Gbit SPI NAND Flash Memory

The GD5F2GQ4UF9IGR from GigaDevice Semiconductor is a high-performance 2Gbit SPI NAND Flash memory IC designed for mission-critical applications in aerospace, automotive, industrial, medical, and telecommunications systems. This advanced memory solution delivers exceptional reliability and performance in demanding environments.

Key Features & Benefits

  • High-Speed Performance: 120MHz clock frequency with SPI Quad I/O interface for rapid data access and transfer
  • Large Capacity: 2Gbit (256M x 8) memory organization provides ample storage for embedded applications
  • Wide Operating Range: -40°C to 85°C temperature range ensures reliable operation in harsh industrial environments
  • Flexible Power Supply: 2.7V to 3.6V voltage range compatible with various system architectures
  • Space-Efficient Package: Compact 8-LGA (6x8mm) surface mount package with exposed pad for enhanced thermal performance
  • Fast Write Performance: 700µs write cycle time for efficient data programming
  • RoHS Compliant: Environmentally friendly, meeting global regulatory standards

Applications

Ideal for embedded systems, IoT devices, automotive electronics, industrial control systems, data logging, firmware storage, and mission-critical applications requiring non-volatile memory with high reliability and traceability.

Why Choose HQICKEY?

As an authorized distributor of GigaDevice semiconductors, HQICKEY ensures 100% authentic components with full traceability, technical support, and rapid fulfillment for your just-in-time procurement needs. Our expertise in high-reliability semiconductors supports engineering teams worldwide.

Related Resources

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Product attributes Property Value
Manufacturer GigaDevice Semiconductor (HK) Limited
Product Series
Packaging Tape & Reel (TR) |
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 120 MHz
Write Cycle Time - Word, Page 700µs
Access Time -
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-VLGA Exposed Pad
Supplier Device Package 8-LGA (6x8)
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

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