Renesas Electronics Corporation IDT71016S12YGI
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 8.58 | Dhs. 8.58 |
| 15+ | Dhs. 8.31 | Dhs. 124.65 |
| 25+ | Dhs. 8.13 | Dhs. 203.25 |
| 50+ | Dhs. 7.68 | Dhs. 384.00 |
| 100+ | Dhs. 6.77 | Dhs. 677.00 |
| N+ | Dhs. 1.35 | Price Inquiry |
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IDT71016S12YGI - High-Speed 1Mbit SRAM Memory IC
The IDT71016S12YGI from Renesas Electronics Corporation is a high-performance 1Mbit asynchronous SRAM designed for mission-critical embedded systems requiring fast, reliable memory access. With an ultra-fast 12ns access time and 12ns write cycle time, this volatile memory IC delivers exceptional performance for industrial, automotive, telecommunications, and aerospace applications.
Key Features & Benefits
- Ultra-Fast Performance: 12ns access time ensures rapid data retrieval for time-sensitive operations
- Flexible Organization: 64K x 16 memory architecture with parallel interface for versatile system integration
- Wide Operating Range: 4.5V to 5.5V supply voltage with -40°C to 85°C temperature tolerance for harsh environments
- Surface Mount Design: 44-BSOJ/44-SOJ package optimized for automated assembly and space-constrained PCB layouts
- Asynchronous Operation: No clock required, simplifying system design and reducing power consumption
- Industrial-Grade Reliability: Built to Renesas quality standards for long lifecycle availability
Typical Applications
This SRAM is ideal for embedded controllers, data buffering, cache memory, networking equipment, medical devices, and any application requiring high-speed, non-volatile temporary storage with deterministic access times.
Related Products & Resources
Explore our complete range of memory semiconductor solutions including EEPROM, Flash, DRAM, and SRAM devices for your embedded system needs. Visit our homepage to discover our full catalog of high-reliability components, or check our technical blog for application notes, design guides, and industry insights.
| Product attributes | Property Value |
| Manufacturer | Renesas Electronics Corporation |
| Product Series | |
| Packaging | Tube | |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Mbit |
| Memory Organization | 64K x 16 |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 12 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 44-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 44-SOJ |
IDT71016S12YGI.pdf