Renesas Electronics Corporation IDT71V416VL10PH8

IDT71V416VL10PH8 - High-Performance 4Mbit Asynchronous SRAM Memory IC

The IDT71V416VL10PH8 from Renesas Electronics Corporation is a high-speed 4Mbit asynchronous SRAM memory integrated circuit designed for applications requiring fast, reliable volatile memory storage. With a blazing-fast 10ns access time and organized as 256K x 16, this SRAM chip delivers exceptional performance for embedded systems, telecommunications equipment, industrial controllers, and networking devices.

Key Features & Benefits

• Ultra-Fast Access: 10ns access time ensures minimal latency for time-critical applications
• Flexible Organization: 256K x 16 memory architecture provides optimal data width for 16-bit processors
• Low Power Operation: 3V to 3.6V supply voltage range for energy-efficient designs
• Wide Temperature Range: Operates reliably from 0°C to 70°C for commercial applications
• Surface Mount Package: 44-TSOP II package enables compact PCB layouts and automated assembly
• Parallel Interface: Simple, straightforward memory interface for easy integration

Ideal Applications

This high-performance SRAM is perfect for networking routers and switches, industrial automation systems, telecommunications infrastructure, data buffering applications, cache memory implementations, and embedded computing platforms where speed and reliability are paramount.

Why Choose This SRAM?

Renesas Electronics Corporation is a trusted leader in semiconductor manufacturing, delivering components that meet the highest standards for quality and reliability. The IDT71V416VL10PH8 combines proven SRAM technology with modern packaging, making it an excellent choice for both new designs and legacy system upgrades. Available in tape and reel packaging for high-volume production efficiency.

Order today and experience the performance advantage of genuine Renesas memory components backed by our commitment to quality and fast shipping.

• IDT71V416VL10PH8.pdf