Renesas Electronics Corporation IDT71V416VL12BE

IDT71V416VL12BE - High-Performance 4Mbit Asynchronous SRAM

The IDT71V416VL12BE from Renesas Electronics is a high-speed 4Mbit asynchronous SRAM memory solution designed for applications requiring fast, reliable volatile memory. With a 256K x 16 organization and blazing-fast 12ns access time, this SRAM chip delivers exceptional performance for embedded systems, networking equipment, telecommunications infrastructure, and industrial control applications.

Key Features & Benefits

• Ultra-Fast Access: 12ns access time ensures minimal latency for time-critical operations
• Flexible Organization: 256K x 16 configuration optimized for 16-bit data bus architectures
• Low Power Operation: 3V to 3.6V supply voltage for energy-efficient designs
• Parallel Interface: Standard parallel memory interface for easy integration
• Surface Mount Package: 48-TFBGA (48-CABGA 9x9mm) for compact PCB layouts
• Industrial Temperature Range: Operates reliably from 0°C to 70°C
• Trusted Manufacturer: Backed by Renesas Electronics' reputation for quality and reliability

Ideal Applications

This high-performance SRAM is perfect for cache memory, buffer storage, data logging, real-time processing systems, and any application where fast random access to volatile memory is essential.

All specifications are subject to manufacturer's datasheet. Contact us for availability, pricing, and technical support.

• IDT71V416VL12BE.pdf