Renesas Electronics Corporation IDT71V416VS10Y
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 16.93 | Dhs. 16.93 |
| 15+ | Dhs. 16.40 | Dhs. 246.00 |
| 25+ | Dhs. 16.05 | Dhs. 401.25 |
| 50+ | Dhs. 15.16 | Dhs. 758.00 |
| 100+ | Dhs. 13.37 | Dhs. 1,337.00 |
| N+ | Dhs. 2.67 | Price Inquiry |
Request Quote / Inquiry
IDT71V416VS10Y - High-Performance 4Mbit Asynchronous SRAM Memory IC
The IDT71V416VS10Y from Renesas Electronics Corporation is a high-reliability 4Mbit asynchronous SRAM memory integrated circuit designed for demanding applications in aerospace, automotive, industrial, telecommunications, and medical sectors. This surface-mount memory IC delivers exceptional performance with 10ns access time and operates on a 3V to 3.6V supply voltage.
Key Features & Benefits
- Fast Access Time: 10ns access time ensures rapid data retrieval for time-critical applications
- High Density: 4Mbit memory capacity with 256K x 16 organization provides ample storage
- Low Power Operation: 3V to 3.6V supply voltage for energy-efficient performance
- Parallel Interface: Standard parallel memory interface for easy integration
- Wide Temperature Range: 0°C to 70°C operating temperature for industrial environments
- Reliable Packaging: 44-SOJ surface mount package for robust PCB assembly
Applications
This SRAM memory IC is ideal for:
- Aerospace and defense systems requiring long lifecycle support
- Automotive electronics and control systems
- Industrial automation and process control
- Telecommunications infrastructure equipment
- Medical devices and diagnostic equipment
- High-speed data buffering and caching
Why Choose Renesas IDT71V416VS10Y?
As an authorized distributor, we provide genuine Renesas components with full traceability and lifecycle support. The IDT71V416VS10Y offers the reliability and performance required for mission-critical applications where data integrity and speed are paramount.
All specifications are subject to manufacturer's datasheet. Contact us for design-in support, volume pricing, and lifecycle information.
| Product attributes | Property Value |
| Manufacturer | Renesas Electronics Corporation |
| Product Series | |
| Packaging | Tube | Tube |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 4Mbit |
| Memory Organization | 256K x 16 |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 44-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 44-SOJ |
IDT71V416VS10Y.pdf