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Regular price Dhs. 5.66
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Product attributes Property Value
Manufacturer ISSI, Integrated Silicon Solution Inc
Product Series
Packaging Tape & Reel (TR) |
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 64Mbit
Memory Organization 4M x 16
Memory Interface Parallel
Clock Frequency 166 MHz
Write Cycle Time - Word, Page -
Access Time 5.4 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package 54-TSOP II
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

The IS42S16400J-6TLI-TR is a high-performance 64Mbit SDRAM memory IC from ISSI (Integrated Silicon Solution Inc), designed for embedded, industrial, automotive, and IoT applications requiring reliable volatile memory solutions.

This SDRAM features a 4M x 16 memory organization with a parallel interface, operating at 166MHz clock frequency with a fast 5.4ns access time. The device operates on a 3V to 3.6V supply voltage and is rated for industrial temperature ranges from -40°C to 85°C, making it ideal for demanding environments.

Packaged in a compact 54-TSOP II surface mount configuration, the IS42S16400J-6TLI-TR comes in tape and reel packaging for automated assembly processes. This authentic component is backed by our lifecycle commitment and quality assurance.

Key Features & Benefits

  • 64Mbit capacity with 4M x 16 organization for flexible system design
  • High-speed 166MHz operation with 5.4ns access time
  • Wide operating voltage range (3V-3.6V) for compatibility
  • Industrial temperature rating (-40°C to 85°C) for harsh environments
  • RoHS compliant for environmental compliance
  • Surface mount 54-TSOP II package for space-efficient PCB layouts
  • Tape and reel packaging for automated manufacturing

Applications

This SDRAM is ideal for embedded systems, industrial controllers, automotive electronics, networking equipment, medical devices, and IoT applications requiring reliable, high-speed volatile memory.

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