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Product attributes Property Value
Manufacturer ISSI, Integrated Silicon Solution Inc
Product Series
Packaging Bulk | Bulk
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Clock Frequency 800 MHz
Write Cycle Time - Word, Page 15ns
Access Time 20 ns
Voltage - Supply 1.425V ~ 1.575V
Operating Temperature 0°C ~ 95°C (TC)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 78-TFBGA
Supplier Device Package 78-TWBGA (8x10.5)
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

IS43TR82560C-125KBL - 2Gbit DDR3 SDRAM Memory IC

The IS43TR82560C-125KBL from ISSI (Integrated Silicon Solution Inc) is a high-performance 2Gbit DDR3 SDRAM memory integrated circuit designed for demanding embedded and industrial applications. This volatile memory device features a 256M x 8 organization with an 800MHz clock frequency, delivering reliable performance across extended temperature ranges from 0°C to 95°C (TC).

Key Features & Benefits

  • High-Speed Performance: 800MHz clock frequency with 20ns access time and 15ns write cycle time ensures rapid data throughput for time-critical applications
  • Industrial Temperature Range: Operates reliably from 0°C to 95°C (TC), making it suitable for aerospace, automotive, telecommunications, and industrial control systems
  • Compact Surface Mount Package: 78-TFBGA (78-TWBGA 8x10.5mm) footprint optimizes board space in space-constrained designs
  • RoHS Compliant: Meets environmental standards for lead-free manufacturing and global regulatory compliance
  • Parallel Interface: Standard parallel memory interface simplifies integration with existing system architectures
  • Long Lifecycle Support: ISSI provides extended product availability and traceability for mission-critical applications

Typical Applications

This DDR3 SDRAM is ideal for embedded computing, networking equipment, medical devices, automotive infotainment systems, industrial automation, and telecommunications infrastructure where reliable, high-speed memory is essential.