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Regular price Dhs. 14.65
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Product attributes Property Value
Manufacturer ISSI, Integrated Silicon Solution Inc
Product Series
Packaging Tube |
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR
Memory Size 256Mbit
Memory Organization 16M x 16
Memory Interface Parallel
Clock Frequency 200 MHz
Write Cycle Time - Word, Page 15ns
Access Time 700 ps
Voltage - Supply 2.3V ~ 2.7V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package 66-TSOP II
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

IS46R16160F-5TLA1 - 256Mbit DDR SDRAM Memory IC

High-performance 256Mbit DDR SDRAM memory integrated circuit from ISSI (Integrated Silicon Solution Inc). This 16M x 16 parallel interface DRAM operates at 200 MHz clock frequency with 15ns write cycle time, designed for industrial applications requiring reliable volatile memory solutions.

Key Features:

  • 256Mbit memory capacity with 16M x 16 organization
  • DDR SDRAM technology for enhanced data transfer rates
  • 200 MHz clock frequency with 700ps access time
  • Wide operating temperature range: -40°C to 85°C (TA)
  • Low voltage operation: 2.3V to 2.7V supply
  • 66-TSOP II surface mount package
  • RoHS compliant for environmental safety

Applications: Ideal for embedded systems, industrial control, automotive electronics, telecommunications equipment, and other high-reliability applications requiring long lifecycle memory components.

Quality & Compliance: This component meets RoHS and REACH compliance standards, ensuring full traceability and adherence to environmental regulations. Backed by ISSI's commitment to long lifecycle support for mission-critical applications.