ISSI, Integrated Silicon Solution Inc IS61LV12816L-10LQI-TR

IS61LV12816L-10LQI-TR - High-Performance 2Mbit Asynchronous SRAM

The IS61LV12816L-10LQI-TR from ISSI (Integrated Silicon Solution Inc) is a high-speed, low-power 2-megabit static random access memory (SRAM) organized as 128K words by 16 bits. This asynchronous SRAM delivers exceptional performance with a 10-nanosecond access time, making it ideal for applications requiring fast data access and reliable memory storage.

Key Features & Benefits

• Ultra-Fast Access: 10ns access time ensures rapid data retrieval for time-critical applications
• Flexible Organization: 128K x 16 memory architecture optimized for 16-bit data bus systems
• Wide Operating Range: Industrial temperature grade (-40°C to 85°C) for harsh environments
• Low Voltage Operation: 3.135V to 3.6V supply voltage for power-efficient designs
• Parallel Interface: Standard parallel memory interface for easy integration
• Surface Mount Package: Compact 44-LQFP (10x10mm) footprint for space-constrained designs
• RoHS Compliant: Environmentally friendly, lead-free construction

Target Applications

This SRAM is perfectly suited for aerospace, automotive, industrial control systems, telecommunications equipment, medical devices, and consumer electronics requiring reliable, high-speed memory with long lifecycle support and full traceability.

All specifications are guaranteed by the manufacturer. Full datasheets and compliance documentation available upon request.