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IS61WV12816DBLL-10TLI - High-Speed 2Mbit Asynchronous SRAM

The IS61WV12816DBLL-10TLI from ISSI (Integrated Silicon Solution Inc) is a high-performance 2-megabit static random-access memory (SRAM) designed for mission-critical embedded systems requiring ultra-fast data access and reliable operation across extreme temperature ranges.

Key Features & Benefits

  • Ultra-Fast Access: 10ns access time enables real-time data processing for time-sensitive applications
  • Optimal Memory Organization: 128K x 16-bit architecture provides efficient parallel data handling
  • Industrial-Grade Reliability: -40°C to 85°C operating range for aerospace, automotive, and industrial environments
  • Low-Voltage Operation: 3V to 3.6V supply voltage for power-efficient designs
  • Space-Saving Package: 44-TSOP II surface mount format (10.16mm width) for compact PCB layouts
  • Asynchronous Interface: Parallel memory interface simplifies integration with microprocessors and controllers

Ideal Applications

This high-reliability SRAM is perfectly suited for networking equipment, telecommunications infrastructure, industrial automation controllers, automotive ECUs, medical devices, and aerospace avionics where data integrity and speed are paramount.

Related Products & Resources

Explore our complete range of memory semiconductor solutions including EEPROM, Flash, DRAM, and SRAM devices for your embedded system needs.

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Product attributes Property Value
Manufacturer ISSI, Integrated Silicon Solution Inc
Product Series
Packaging Tray |
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 2Mbit
Memory Organization 128K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
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