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MB85RC16VPNF-G-JNN1E1
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 5.51 AED | Dhs. 5.51 AED |
| 15+ | Dhs. 5.35 AED | Dhs. 80.25 AED |
| 25+ | Dhs. 5.23 AED | Dhs. 130.75 AED |
| 50+ | Dhs. 4.94 AED | Dhs. 247.00 AED |
| 100+ | Dhs. 4.36 AED | Dhs. 436.00 AED |
| N+ | Dhs. 0.87 AED | Price Inquiry |
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RAMXEED MB85RC16VPNF-G-JNN1E1 - High-Performance 16Kbit FRAM Memory IC
The MB85RC16VPNF-G-JNN1E1 from RAMXEED is a premium 16Kbit Ferroelectric RAM (FRAM) memory IC designed for industrial, automotive, and embedded applications requiring non-volatile memory with exceptional endurance and fast write speeds. This advanced FRAM technology combines the benefits of RAM-like performance with non-volatile data retention, making it ideal for data logging, configuration storage, and mission-critical applications.
Key Features & Benefits
- 16Kbit FRAM Technology: Ferroelectric RAM offers virtually unlimited write endurance (10^13 cycles) compared to traditional EEPROM
- Fast Access Time: 550ns access time enables rapid read/write operations without performance bottlenecks
- I2C Interface: Industry-standard I2C bus (1MHz clock) simplifies integration into existing designs
- Wide Operating Voltage: 3V to 5.5V supply range provides flexibility for various system architectures
- Industrial Temperature Range: -40°C to 85°C operation ensures reliability in harsh environments
- Compact 8-SOIC Package: Space-efficient surface mount design (3.90mm width) for high-density PCB layouts
- Low Power Consumption: FRAM technology consumes significantly less power during write operations than EEPROM
- RoHS Compliant: Environmentally friendly, meeting international standards
Typical Applications
- Industrial automation and control systems
- Automotive electronics and infotainment
- Smart meters and energy management
- Medical devices and diagnostic equipment
- IoT sensors and edge computing devices
- Configuration and calibration data storage
- Event logging and black box recorders
Why Choose FRAM Technology?
Ferroelectric RAM (FRAM) represents a significant advancement over traditional non-volatile memory technologies. Unlike EEPROM or Flash memory, FRAM offers:
- Superior Endurance: 10 trillion write cycles vs. 100,000-1 million for EEPROM
- Faster Write Speed: Write at bus speed without delays or page buffers
- Lower Power: No high-voltage charge pumps required for write operations
- Instant Write: No erase cycles needed, reducing system complexity
- Data Retention: 10+ years at 85°C, 150+ years at room temperature
Quality & Authenticity Guarantee
At HQICKEY, we source all components directly from authorized distributors and manufacturers, ensuring 100% authentic RAMXEED products with full traceability. Every MB85RC16VPNF-G-JNN1E1 IC comes with manufacturer warranty support and meets stringent quality standards for industrial and commercial applications.
Related Products & Resources
Explore our comprehensive selection of memory semiconductor devices including EEPROM, Flash, DRAM, SRAM, and other FRAM solutions for your embedded system needs. For technical insights, application notes, and industry trends, visit our technical blog.
Need assistance with product selection or technical specifications? Our engineering team is ready to help you find the perfect memory solution for your application. Contact us today for expert guidance and competitive pricing on volume orders.
| Product attributes | Property Value |
| Manufacturer | RAMXEED |
| Product Series | |
| Packaging | Tube | |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 16Kbit |
| Memory Organization | 2K x 8 |
| Memory Interface | I2C |
| Clock Frequency | 1 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 550 ns |
| Voltage - Supply | 3V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| ROHS |  |
MB85RC16VPNF-G-JNN1E1.pdf