RAMXEED MB85RS1MTPH-G-JNE1

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MB85RS1MTPH-G-JNE1 - 1Mbit FRAM Memory IC

The MB85RS1MTPH-G-JNE1 from RAMXEED is a high-performance 1Mbit Ferroelectric RAM (FRAM) memory IC featuring non-volatile storage with the speed and endurance advantages of FRAM technology. This device offers 128K x 8 memory organization with a fast SPI serial interface supporting clock frequencies up to 40MHz.

Key Features & Benefits

  • Non-Volatile FRAM Technology: Combines the speed of SRAM with the non-volatility of Flash, offering virtually unlimited write endurance (10¹⁵ cycles)
  • Fast SPI Interface: 40MHz clock frequency enables rapid data access and transfer
  • Wide Operating Voltage: 1.8V to 3.6V supply range supports diverse system requirements
  • Industrial Temperature Range: -40°C to 85°C operation ensures reliability in demanding environments
  • Through-Hole Package: 8-DIP (0.300", 7.62mm) format for easy prototyping and legacy system integration
  • Low Power Consumption: FRAM technology requires no refresh cycles, reducing overall power requirements

Applications

Ideal for industrial automation, automotive systems, medical devices, aerospace equipment, data logging, configuration storage, and any application requiring fast, reliable non-volatile memory with high write endurance.

Quality & Compliance

Supplied with full traceability and RoHS/REACH compliance documentation. Long lifecycle commitment ensures availability for critical design-in applications.

Product attributes Property Value
Manufacturer RAMXEED
Product Series
Packaging Tube |
Memory Type Non-Volatile
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 1Mbit
Memory Organization 128K x 8
Memory Interface SPI
Clock Frequency 40 MHz
Write Cycle Time - Word, Page -
Access Time -
Voltage - Supply 1.8V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Through Hole
Package / Case 8-DIP (0.300", 7.62mm)
Supplier Device Package 8-DIP