MB85RS256BPNF-G-JNE1
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 10.11 AED | Dhs. 10.11 AED |
| 15+ | Dhs. 9.79 AED | Dhs. 146.85 AED |
| 25+ | Dhs. 9.58 AED | Dhs. 239.50 AED |
| 50+ | Dhs. 9.04 AED | Dhs. 452.00 AED |
| 100+ | Dhs. 7.98 AED | Dhs. 798.00 AED |
| N+ | Dhs. 1.60 AED | Price Inquiry |
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RAMXEED MB85RS256BPNF-G-JNE1 - High-Performance 256Kbit FRAM Memory
The MB85RS256BPNF-G-JNE1 is a cutting-edge 256Kbit Ferroelectric Random Access Memory (FRAM) chip from RAMXEED, engineered for mission-critical applications requiring ultra-fast write speeds, exceptional endurance, and reliable non-volatile data retention. This advanced memory solution combines the speed of SRAM with the non-volatility of Flash, making it ideal for aerospace, automotive, industrial control systems, medical devices, and telecommunications equipment.
Key Features & Benefits
- Ultra-Fast Write Performance: FRAM technology enables instantaneous write operations without the delays associated with traditional Flash or EEPROM
- Exceptional Endurance: Supports up to 10 trillion (10^13) read/write cycles, far exceeding Flash and EEPROM capabilities
- Low Power Consumption: Minimal active and standby current draw extends battery life in portable applications
- Industrial Temperature Range: Operates reliably from -40°C to 85°C for harsh environment deployments
- SPI Interface: Industry-standard serial peripheral interface simplifies integration with microcontrollers and processors
- Instant Data Retention: No write delays or battery backup required - data is preserved immediately upon power loss
Applications
The MB85RS256BPNF-G-JNE1 excels in demanding applications including:
- Aerospace flight control systems and avionics data logging
- Automotive ECU parameter storage and event recording
- Industrial automation and PLC configuration memory
- Medical device patient data and calibration storage
- Telecommunications network equipment configuration
- Smart metering and energy management systems
- IoT edge devices requiring frequent data updates
Why Choose FRAM Technology?
Unlike traditional Flash memory that degrades after 100,000 write cycles, FRAM delivers virtually unlimited endurance with write speeds 1000x faster. The ferroelectric crystal structure provides inherent non-volatility without requiring complex charge pumps or erase cycles, resulting in lower power consumption and instant write completion. This makes FRAM the optimal choice for applications requiring frequent data updates, rapid system response, and long-term reliability.
Quality & Compliance
This component is RoHS compliant and manufactured to the highest quality standards, ensuring reliability in critical embedded systems. RAMXEED's rigorous testing and quality control processes guarantee consistent performance across the full industrial temperature range.
Related Products
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| Product attributes | Property Value |
| Manufacturer | RAMXEED |
| Product Series | |
| Packaging | Tube | |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 256Kbit |
| Memory Organization | 32K x 8 |
| Memory Interface | SPI |
| Clock Frequency | 33 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| ROHS |

MB85RS256BPNF-G-JNE1.pdf