MB85RS256TYPNF-G-AWE2

MB85RS256TYPNF-G-AWE2 - High-Reliability 256Kbit FRAM Memory IC

The MB85RS256TYPNF-G-AWE2 is a cutting-edge 256Kbit Ferroelectric Random Access Memory (FRAM) chip designed for mission-critical applications requiring exceptional endurance, ultra-fast write speeds, and low power consumption. Manufactured by RAMXEED, this non-volatile memory solution combines the speed of SRAM with the data retention of Flash, making it ideal for aerospace, automotive, industrial control systems, medical devices, and telecommunications equipment.

Key Features & Benefits

• Ultra-High Endurance: FRAM technology delivers 10 trillion (10^13) read/write cycles, vastly outperforming traditional EEPROM and Flash memory
• Lightning-Fast Write Performance: Write data at bus speed with zero write delays - no page buffers or erase cycles required
• True Non-Volatile Storage: Retains data for 10+ years without power, ensuring critical data integrity
• Low Power Operation: Minimal active and standby current consumption extends battery life in portable applications
• Wide Operating Range: Functions reliably from -40°C to +125°C with 1.8V to 3.6V supply voltage
• Industry-Standard SPI Interface: Easy integration with microcontrollers and processors at up to 33 MHz clock frequency
• Compact 8-SOP Package: Space-efficient surface mount design for high-density PCB layouts

Ideal Applications

This FRAM memory chip excels in demanding environments where data integrity, write endurance, and power efficiency are paramount:

• Aerospace flight data recorders and avionics systems
• Automotive ECUs, ADAS systems, and event data recorders
• Industrial PLCs, smart meters, and process control equipment
• Medical implantable devices and diagnostic equipment
• Telecommunications base stations and network infrastructure
• IoT edge devices and sensor networks
• Data logging and configuration storage applications

Why Choose FRAM Technology?

Ferroelectric RAM represents a paradigm shift in non-volatile memory technology. Unlike Flash or EEPROM that require high-voltage charge pumps and millisecond-scale erase cycles, FRAM writes data by polarizing ferroelectric crystals at the same speed as SRAM. This fundamental difference eliminates write delays, dramatically extends endurance, and reduces power consumption - making FRAM the superior choice for applications with frequent data updates, strict power budgets, or extreme reliability requirements.

Quality & Compliance

The MB85RS256TYPNF-G-AWE2 meets stringent RoHS environmental compliance standards, ensuring safe deployment in global markets. RAMXEED's rigorous quality control processes guarantee consistent performance across automotive, industrial, and aerospace temperature grades.

Related Products & Resources

Explore our comprehensive selection of memory solutions including FRAM, EEPROM, Flash, and SRAM components for your embedded system designs. Visit our homepage to discover our full catalog of high-reliability semiconductors, microcontrollers, and electronic components. Stay informed about the latest product releases, technical insights, and industry trends by reading our technical blog.

• MB85RS256TYPNF-G-AWE2.pdf