RAMXEED MB85RS256TYPNF-G-AWE2
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | $11.29 | $11.29 |
| 15+ | $2.59 | $38.85 |
| 25+ | $2.54 | $63.50 |
| 50+ | $2.40 | $120.00 |
| 100+ | $2.12 | $212.00 |
| N+ | $0.42 | Price Inquiry |
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| Product attributes | Property Value |
| Manufacturer | RAMXEED |
| Product Series | |
| Packaging | Tube | |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 256Kbit |
| Memory Organization | 32K x 8 |
| Memory Interface | SPI |
| Clock Frequency | 33 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 1.8V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| ROHS |  |
MB85RS256TYPNF-G-AWE2 - High-Reliability 256Kbit FRAM Memory IC
The MB85RS256TYPNF-G-AWE2 is a cutting-edge 256Kbit Ferroelectric Random Access Memory (FRAM) chip designed for mission-critical applications requiring exceptional endurance, ultra-fast write speeds, and low power consumption. Manufactured by RAMXEED, this non-volatile memory solution combines the speed of SRAM with the data retention of Flash, making it ideal for aerospace, automotive, industrial control systems, medical devices, and telecommunications equipment.
Key Features & Benefits
- Ultra-High Endurance: FRAM technology delivers 10 trillion (10^13) read/write cycles, vastly outperforming traditional EEPROM and Flash memory
- Lightning-Fast Write Performance: Write data at bus speed with zero write delays - no page buffers or erase cycles required
- True Non-Volatile Storage: Retains data for 10+ years without power, ensuring critical data integrity
- Low Power Operation: Minimal active and standby current consumption extends battery life in portable applications
- Wide Operating Range: Functions reliably from -40°C to +125°C with 1.8V to 3.6V supply voltage
- Industry-Standard SPI Interface: Easy integration with microcontrollers and processors at up to 33 MHz clock frequency
- Compact 8-SOP Package: Space-efficient surface mount design for high-density PCB layouts
Ideal Applications
This FRAM memory chip excels in demanding environments where data integrity, write endurance, and power efficiency are paramount:
- Aerospace flight data recorders and avionics systems
- Automotive ECUs, ADAS systems, and event data recorders
- Industrial PLCs, smart meters, and process control equipment
- Medical implantable devices and diagnostic equipment
- Telecommunications base stations and network infrastructure
- IoT edge devices and sensor networks
- Data logging and configuration storage applications
Why Choose FRAM Technology?
Ferroelectric RAM represents a paradigm shift in non-volatile memory technology. Unlike Flash or EEPROM that require high-voltage charge pumps and millisecond-scale erase cycles, FRAM writes data by polarizing ferroelectric crystals at the same speed as SRAM. This fundamental difference eliminates write delays, dramatically extends endurance, and reduces power consumption - making FRAM the superior choice for applications with frequent data updates, strict power budgets, or extreme reliability requirements.
Quality & Compliance
The MB85RS256TYPNF-G-AWE2 meets stringent RoHS environmental compliance standards, ensuring safe deployment in global markets. RAMXEED's rigorous quality control processes guarantee consistent performance across automotive, industrial, and aerospace temperature grades.
Related Products & Resources
Explore our comprehensive selection of memory solutions including FRAM, EEPROM, Flash, and SRAM components for your embedded system designs. Visit our homepage to discover our full catalog of high-reliability semiconductors, microcontrollers, and electronic components. Stay informed about the latest product releases, technical insights, and industry trends by reading our technical blog.
MB85RS256TYPNF-G-AWE2.pdf