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MB85RS256TYPNF-GS-AWERE2
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 10.11 AED | Dhs. 10.11 AED |
| 15+ | Dhs. 9.79 AED | Dhs. 146.85 AED |
| 25+ | Dhs. 9.58 AED | Dhs. 239.50 AED |
| 50+ | Dhs. 9.04 AED | Dhs. 452.00 AED |
| 100+ | Dhs. 7.98 AED | Dhs. 798.00 AED |
| N+ | Dhs. 1.60 AED | Price Inquiry |
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MB85RS256TYPNF-GS-AWERE2 - 256Kbit FRAM Memory IC
The MB85RS256TYPNF-GS-AWERE2 is a high-performance 256Kbit Ferroelectric Random Access Memory (FRAM) designed for mission-critical applications requiring non-volatile storage with exceptional endurance and fast write speeds. This advanced memory solution combines the benefits of RAM-like performance with non-volatile data retention, making it ideal for aerospace, automotive, industrial, medical, and telecommunications systems.
Key Features & Benefits
- High-Speed Performance: 33MHz SPI interface with ultra-fast 13ns access time for rapid data operations
- Extended Temperature Range: Operates reliably from -40°C to 125°C, perfect for harsh industrial environments
- Flexible Power Supply: Wide voltage range (1.8V to 3.6V) for versatile system integration
- Compact Surface Mount Package: 8-SOIC (3.90mm width) for space-constrained designs
- Superior Endurance: FRAM technology delivers virtually unlimited write cycles compared to traditional EEPROM
- Instant Write: No write delays - data is stored immediately without page buffers
- Low Power Consumption: Energy-efficient operation ideal for battery-powered applications
Applications
This FRAM memory IC is engineered for demanding applications including:
- Aerospace flight control systems and avionics
- Automotive ECUs and safety-critical systems
- Industrial automation and process control
- Medical device data logging and configuration storage
- Telecommunications infrastructure equipment
- Smart metering and energy management systems
- Embedded systems requiring frequent data updates
Why Choose FRAM Technology?
Ferroelectric RAM offers distinct advantages over traditional memory technologies. Unlike EEPROM or Flash, FRAM provides instant write capability without erase cycles, dramatically extending component lifespan. The technology delivers exceptional write endurance (10^14 cycles), making it perfect for applications with frequent data updates. Combined with low power consumption and high-speed access, FRAM represents the optimal choice for next-generation embedded systems.
Related Products & Resources
Explore our complete range of memory semiconductor solutions including SRAM, DRAM, Flash, and EEPROM components. Visit our homepage to discover our full catalog of high-reliability semiconductors for mission-critical applications. Stay updated with the latest industry insights and product announcements on our news blog.
Order the MB85RS256TYPNF-GS-AWERE2 today and experience the reliability and performance of advanced FRAM technology for your critical applications.
| Product attributes | Property Value |
| Manufacturer | RAMXEED |
| Product Series | |
| Packaging | Tape & Reel (TR) | |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 256Kbit |
| Memory Organization | 32K x 8 |
| Memory Interface | SPI |
| Clock Frequency | 33 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 13 ns |
| Voltage - Supply | 1.8V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| ROHS |  |
MB85RS256TYPNF-GS-AWERE2.pdf