RAMXEED MB85RS512TYPN-G-AWE1

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Product attributes Property Value
Manufacturer RAMXEED
Product Series
Packaging Tray | Tray
Memory Type Non-Volatile
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 512Kbit
Memory Organization 64K x 8
Memory Interface SPI
Clock Frequency 50 MHz
Write Cycle Time - Word, Page -
Access Time 9 ns
Voltage - Supply 1.8V ~ 3.6V
Operating Temperature -40°C ~ 125°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Supplier Device Package 8-DFN (5x6)
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

MB85RS512TYPN-G-AWE1 - High-Performance FRAM Memory Solution

The MB85RS512TYPN-G-AWE1 is a premium 512Kbit Ferroelectric RAM (FRAM) memory chip from RAMXEED, engineered for mission-critical applications in aerospace, automotive, industrial automation, and telecommunications. This non-volatile memory combines the speed of SRAM with the data retention of Flash, delivering exceptional performance with virtually unlimited write endurance.

Key Features & Benefits

  • Ultra-Fast Access: 9ns access time with 50MHz SPI interface for rapid data operations
  • Wide Operating Range: 1.8V to 3.6V supply voltage, -40°C to 125°C temperature range
  • Proven Reliability: FRAM technology provides 10 trillion write cycles with 10-year data retention
  • Authentic Components: Authorized distributor stock with full manufacturer documentation and traceability
  • Design-Ready: 8-VDFN exposed pad package (5x6mm) for efficient thermal management

Ideal Applications

Perfect for data logging, configuration storage, parameter retention, and real-time systems requiring instant write capability without wear concerns. The 64K x 8 organization provides flexible memory mapping for embedded designs.

Quality Assurance: All components are sourced from authorized distributors with full manufacturer traceability. RoHS compliant. Long lifecycle commitment ensures availability for your production needs.